參數(shù)資料
型號(hào): W25Q80VZPI
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 1M X 8 SPI BUS SERIAL EEPROM, DSO8
封裝: 6 X 5 MM, WSON-8
文件頁數(shù): 31/60頁
文件大小: 1276K
代理商: W25Q80VZPI
W25Q80, W25Q16, W25Q32
Publication Release Date: June 20, 2007
- 37 -
Advanced - Revision A5
10.2.19 Chip Erase (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in figure 19.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in
progress, the Read Status Register instruction may still be accessed to check the status of the BUSY
bit. The BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is
ready to accept other instructions again. After the Chip Erase cycle has finished the Write Enable Latch
(WEL) bit in the Status Register is cleared to 0. The Chip Erase instruction will not be executed if any
page is protected by the Block Protect (BP2, BP1, and BP0) bits (see Status Register Memory
Protection table).
Figure 19. Chip Erase Instruction Sequence Diagram
相關(guān)PDF資料
PDF描述
W26B041H70LI 256K X 16 STANDARD SRAM, 70 ns, PDSO44
W26B04B-70LE 256K X 16 STANDARD SRAM, 70 ns, PBGA48
W29L102Q-20B 64K X 16 FLASH 3.3V PROM, 200 ns, PDSO40
W33D2011 LIQUID CRYSTAL DISPLAY DRIVER, PQFP64
W33D2021 LIQUID CRYSTAL DISPLAY DRIVER, PQFP64
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25S243A 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
W25S243A-12 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
W25S243AD-12 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
W25S243AF-12 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
W25X10 制造商:WINBOND 制造商全稱:Winbond 功能描述:The W25X10 (1M-bit), W25X20 (2M-bit), W25X40 (4M-bit) and W25X80 (8M-bit) Serial Flash memories provide a storage solution for systems with limited space, pins and power.