參數(shù)資料
型號: W25Q80BVSNAP
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 8M X 1 SPI BUS SERIAL EEPROM, PDSO8
封裝: 0.150 INCH, GREEN, PLASTIC, SOIC-8
文件頁數(shù): 42/75頁
文件大?。?/td> 1055K
代理商: W25Q80BVSNAP
W25Q80BV
Publication Release Date: October 06, 2010
- 47 -
Revision D
9.2.29 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in
figure 27.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of tDP (See AC Characteristics). While in the power-down state only the Release from Power-
down / Device ID instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored. This includes the Read Status Register instruction, which is always available
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition
for securing maximum write protection. The device always powers-up in the normal operation with the
standby current of ICC1.
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (B9h)
Mode 0
Mode 3
tDP
Power-down current
Stand-by current
Figure 27. Deep Power-down Instruction Sequence Diagram
相關(guān)PDF資料
PDF描述
WV3EG128M72EFSR262D3MG 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
W7NCF08GH10CS4FM1G FLASH 3.3V PROM MODULE, XMA50
W7NCF08GH10CSA5DM1G FLASH 3.3V PROM MODULE, XMA50
W7NCF08GH10IS8BM1G FLASH 3.3V PROM MODULE, XMA50
W7NCF08GH10ISA4HM1G FLASH 3.3V PROM MODULE, XMA50
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25Q80BVSNIG 功能描述:IC SPI FLASH 8MBIT 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP(0.465",11.8mm 寬) 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8
W25Q80BVSNIG TR 制造商:Winbond Electronics Corp 功能描述: 制造商:Winbond Electronics Corp 功能描述:IC FLASH 8MBIT 104MHZ 8SOIC
W25Q80BVSNIP 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BVSSAG 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BVSSAP 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI