- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄231496 > W25Q80BVDAAG (WINBOND ELECTRONICS CORP) 8M X 1 SPI BUS SERIAL EEPROM, PDIP8 PDF資料下載
參數(shù)資料
| 型號： | W25Q80BVDAAG |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 8M X 1 SPI BUS SERIAL EEPROM, PDIP8 |
| 封裝： | 0.300 INCH, GREEN, PLASTIC, DIP-8 |
| 文件頁數(shù)： | 42/75頁 |
| 文件大?。?/td> | 1055K |
| 代理商： | W25Q80BVDAAG |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁當前第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁
W25Q80BV
Publication Release Date: October 06, 2010
- 47 -
Revision D
9.2.29 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in
figure 27.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of tDP (See AC Characteristics). While in the power-down state only the Release from Power-
down / Device ID instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored. This includes the Read Status Register instruction, which is always available
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition
for securing maximum write protection. The device always powers-up in the normal operation with the
standby current of ICC1.
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (B9h)
Mode 0
Mode 3
tDP
Power-down current
Stand-by current
Figure 27. Deep Power-down Instruction Sequence Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3EG7266S262AD4 | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA200 |
| WV3EG128M72EFSR335D3MG | 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 |
| WED7F416IDE33ADC25 | 26M X 16 FLASH 3.3V PROM, DMA144 |
| WED3DG649V7D1I | 8M X 64 SYNCHRONOUS DRAM MODULE, ZMA144 |
| W7NCF08GH10CS3CM1G | FLASH 3.3V PROM MODULE, XMA50 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25Q80BVDAAP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q80BVDAIG | 功能描述:SPI FLASH 8MBIT 8-DIP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR) |
| W25Q80BVDAIP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q80BVSNAG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q80BVSNAP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
發(fā)布緊急采購，3分鐘左右您將得到回復。