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W25Q64BV

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11.2.24 High Performance Mode (A3h)

The High Performance Mode (HPM) instruction must be executed prior to Dual or Quad I/O instructions

when operating at high frequencies (see FR and FR1 in AC Electrical Characteristics). This instruction

allows pre-charging of internal charge pumps so the voltages required for accessing the Flash memory

array are readily available. The instruction sequence includes the A3h instruction code followed by three

dummy byte clocks shown in Fig. 24. After the HPM instruction is executed, the device will maintain a

slightly higher standby current (Icc3) than standard SPI operation. The Release from Power-down or

HPM instruction (ABh) can be used to return to standard SPI standby current (Icc1). In addition, Write

Enable instruction (06h) and Power Down instruction (B9h) will also release the device from HPM mode

back to standard SPI standby state.

Figure 24. High Performance Mode Instruction Sequence

11.2.25 Release Power-down or High Performance Mode / Device ID (ABh)

The Release from Power-down or High performance Mode / Device ID instruction is a multi-purpose

instruction. It can be used to release the device from the power-down state or High Performance Mode,

or obtain the devices electronic identification (ID) number.

To release the device from the power-down state or High Performance Mode, the instruction is issued by

driving the /CS pin low, shifting the instruction code “ABh” and driving /CS high as shown in figure 25.

Release from power-down will take the time duration of tRES1 (See AC Characteristics) before the device

will resume normal operation and other instructions are accepted. The /CS pin must remain high during

the tRES1 time duration.

When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by

driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID

bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in figure

26. The Device ID values for the W25Q64BV is listed in Manufacturer and Device Identification table. The

Device ID can be read continuously. The instruction is completed by driving /CS high.

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相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
W25Q64BVZEIG	功能描述:IC SPI FLASH 64MBIT 8WSON RoHS:是類別:集成電路 (IC) >> 存儲(chǔ)器系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬）供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR)
W25Q64BVZEIP	制造商:WINBOND 制造商全稱:Winbond 功能描述:64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q64CV	制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q64CVDAAG	制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q64CVDAAP	制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

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