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參數(shù)資料
| 型號： | W25Q64BVSSIP |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 8M X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.208 INCH, GREEN, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 30/61頁 |
| 文件大?。?/td> | 1726K |
| 代理商： | W25Q64BVSSIP |
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W25Q64BV
- 36 -
11.2.18 32KB Block Erase (52h)
The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “52h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block
Erase instruction sequence is shown in figure 18.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase
instruction will commence for a time duration of tBE1 (See AC Characteristics). While the Block Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Block Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase
instruction will not be executed if the addressed page is protected by the Block Protect (SEC, TB, BP2,
BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 18. 32KB Block Erase Instruction Sequence Diagram
相關(guān)PDF資料 |
PDF描述 |
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| W25Q64CVZPAG | 64M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q64CVZEAG | 64M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q64CVDAIG | 64M X 1 SPI BUS SERIAL EEPROM, PDIP8 |
| W25Q64DWZPIP | 256K X 32 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8 |
| W25Q80BLSNIG | 8M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25Q64BVZEIG | 功能描述:IC SPI FLASH 64MBIT 8WSON RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標準包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| W25Q64BVZEIP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q64CV | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q64CVDAAG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q64CVDAAP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
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