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參數(shù)資料
| 型號(hào)： | VP2020L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-200V，夾斷電流-0.12A的P溝道增強(qiáng)型MOSFET晶體管) |
| 中文描述： | P通道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓，為200V，夾斷電流，0.12A的P溝道增強(qiáng)型MOSFET的晶體管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 73K |
| 代理商： | VP2020L |
VP2020L, BSS92
Vishay Siliconix
www.Vishay Siliconix.com FaxBack 408-970-5600
11-2
Document Number: 70210
S-00199—Rev. D, 1-Jan-00
Limits
VP2020L
BSS92
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Drain-Source
Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= –250 A
–220
–200
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –1 mA
–1.9
–0.8
–2.5
–0.8
–2.8
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
10
100
nA
T
J
= 125 C
50
Zero Gate Voltage
Drain Current
V l
I
DSS
V
DS
= 0.8 x V
(BR)DSS
, V
GS
= 0 V
–1
A
T
J
= 125 C
–100
V
DS
= –200 V, V
GS
= 0 V
–60
T
J
= 125 C
–200
V
DS
= –60 V, V
GS
= 0 V
V
DS
= –10 V, V
GS
= –4.5 V
V
GS
= –10 V, I
D
= –0.1 A
V
GS
= –4.5 V, I
D
= –0.1 A
–0.2
On-State Drain Current
c
I
D(on)
–250
–100
mA
D i S
Drain Source
Drain-Source
c
On-Resistance
11.5
20
15
20
r
DS(
T
J
= 125 C
28
40
)
V
GS
= –4.5 V, I
D
= –0.05 A
15
T
J
= 125 C
28
Forward
Transconductance
c
g
fs
V
DS
= –10 V, I
D
= –0.1 A
V
DS
= –25 V, I
D
= –0.1 A
I
S
= –0.3 A, V
GS
= 0 V
170
100
mS
170
60
Diode Forward Voltage
V
SD
–0.9
–1.2
V
Dynamic
Input Capacitance
C
iss
C
oss
C
rss
V
DS
= –25 V V
GS
= 0 V
f = 1 MHz
30
70
130
Output Capacitance
10
20
30
pF
Reverse Transfer Capacitance
Switching
d
3
10
15
T
O Ti
t
ON
t
d(on)
t
r
t
OFF
t
d(off)
t
f
V
DD
= –25 V R
L
= 250
I
D
–0.1 A, V
= –10 V
R
= 25
G
14
6
10
8
15
ns
Turn-Off Time
35
18
30
17
25
Notes
a.
b.
c.
d.
T
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VPDQ20
2%.
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