參數(shù)資料
型號： VNW35NV04
廠商： 意法半導體
英文描述： “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
中文描述： “OMNIFET二”：充分AUTOPROTECTED功率MOSFET
文件頁數(shù)： 4/19頁
文件大?。?/td> 412K
代理商： VNW35NV04
4/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
ELECTRICAL CHARACTERISTICS (continued)
(T
j
=25°C, unless otherwise specified)
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
PROTECTIONS (-40°C < T
j
< 150°C, unless otherwise specified)
Symbol
Parameter
I
lim
Drain Current Limit
Step Response Current
Limit
Overtemperature
Shutdown
T
jrs
Overtemperature Reset
I
gf
Fault Sink Current
(*) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
g
fs
(*)
Forward
Transconductance
Output Capacitance
V
DD
=13V; I
D
=15A
35
S
C
OSS
V
DS
=13V; f=1MHz; V
IN
=0V
1300
pF
Symbol
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Parameter
Test Conditions
Min
Typ
150
840
980
600
4
27
34
31
Max
500
2500
3000
1500
12
100
120
110
Unit
ns
ns
ns
ns
μ
s
μ
s
μ
s
μ
s
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
=15V; I
D
=15A
V
gen
=5V; R
gen
=R
IN MIN
=4.7
(see figure 1)
V
DD
=15V; I
D
=15A
V
gen
=5V; R
gen
=2.2K
(see figure 1)
(di/dt)
on
Turn-on Current Slope
V
DD
=15V; I
D
=15A
V
gen
=5V; R
gen
=R
IN MIN
=4.7
V
DD
=12V; I
D
=15A; V
IN
=5V
I
gen
=2.13mA (see figure 5)
18
A/
μ
s
Q
i
Total Input Charge
118
nC
Symbol
V
SD
(*)
t
rr
Q
rr
I
RRM
Parameter
Test Conditions
Min
Typ
0.8
400
1.4
7
Max
Unit
V
ns
μ
C
A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=15A; V
IN
=0V
I
SD
=15A; dI/dt=100A/
μ
s
V
DD
=30V; L=200
μ
H
(see test circuit, figure 2)
Test Conditions
Min
30
Typ
45
Max
60
Unit
A
V
IN
=6V; V
DS
=13V
V
IN
=6V; V
DS
=13V
t
dlim
50
μ
s
T
jsh
150
175
200
°C
135
10
°C
mA
V
IN
=5V; V
DS
=13V; T
j
=T
jsh
starting T
j
=25°C; V
DD
=24V
V
IN
=5V; R
gen
=R
IN MIN
=4.7
;
L=24mH
(see figures 3 & 4)
15
20
E
as
Single Pulse
Avalanche Energy
1.7
J
2
相關(guān)PDF資料
PDF描述
VNW50N04A THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:100kR; Tolerance, resistance:+/-1%; Beta value:4540; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
VNW50N04 ”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET
VO1815-3 Peripheral IC
VO1814 Peripheral IC
VO1815-1 Peripheral IC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VNW35NV04-E 功能描述:電源開關(guān) IC - 配電 OMNIFETII FULLY AUTO PROTECT Pwr MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5
VNW50N04 功能描述:MOSFET N-Ch 42V 50A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNW50N04A 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET
VNW50N04A_04 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:FULLY AUTOPROTECTED POWER MOSFET
VNW50N04-E 功能描述:MOSFET N-Ch 42V 50A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*