參數(shù)資料
型號(hào): VNW50N04
廠商: 意法半導(dǎo)體
英文描述: ”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET
中文描述: “OMNIFET”:充分AUTOPROTECTED功率MOSFET
文件頁(yè)數(shù): 1/11頁(yè)
文件大?。?/td> 135K
代理商: VNW50N04
VNW50N04
”O(jiān)MNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
August 1996
BLOCK DIAGRAM
TYPE
V
clamp
R
DS(on)
0.012
I
lim
VNW50N04
42 V
50 A
I
LINEAR CURRENT LIMITATION
I
THERMAL SHUT DOWN
I
SHORTCIRCUIT PROTECTION
I
INTEGRATEDCLAMP
I
LOW CURRENT DRAWN FROM INPUT PIN
I
DIAGNOSTIC FEEDBACK THROUGHINPUT
PIN
I
ESDPROTECTION
I
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
I
COMPATIBLE WITH STANDARD POWER
MOSFET
I
STANDARD TO-247 PACKAGE
DESCRIPTION
The VNW50N04 is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
Fault feedbackcan be detected by monitoring the
voltageat the input pin.
1
2
3
TO-247
1/11
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