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參數(shù)資料
| 型號(hào)： | VNW50N04 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET |
| 中文描述： | “OMNIFET”：充分AUTOPROTECTED功率MOSFET |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 135K |
| 代理商： | VNW50N04 |
During
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I
iss
) flows into the Input pin in order to
supply the internalcircuitry.
The device integrates:
-
OVERVOLTAGE
CLAMP
internally set at 42V, along with the rugged
avalanche
characteristics
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductiveloads.
-
LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the
heatsink.
Both
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperaturethresholdT
jsh
.
normal
operation, the
Input
pin
is
PROTECTION:
of
the
Power
case
and
junction
-
OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperatureand are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperaturecutout occurs at
minimum 170
o
C. The device is automatically
restarted when the chip temperature falls
below 155
o
C.
-
STATUS FEEDBACK: In the case of an
overtemperature fault
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100
.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a smallincrease in R
DS(on)
).
condition,
a
Status
PROTECTION FEATURES
VNW50N04
4/11
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VNW50N04A | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET |
| VNW50N04A_04 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:FULLY AUTOPROTECTED POWER MOSFET |
| VNW50N04-E | 功能描述:MOSFET N-Ch 42V 50A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VNY3 | 制造商:Carlo Gavazzi 功能描述:LVL SNSR COND 3 PROBE NYLON |
| VNYI3 | 制造商:Carlo Gavazzi 功能描述: |
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