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參數(shù)資料
| 型號(hào)： | VNW50N04 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET |
| 中文描述： | “OMNIFET”：充分AUTOPROTECTED功率MOSFET |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | VNW50N04 |
ABSOLUTE MAXIMUMRATING
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
in
= 0)
Internally Clamped
V
V
in
I
D
Input Voltage
18
V
Drain Current
Internally Limited
A
I
R
Reverse DC Output Current
-100
A
V
esd
Electrostatic Discharge (C= 100 pF, R=1.5 K
)
Total Dissipation at T
c
= 25
o
C
Operating Junction Temperature
2000
V
P
tot
T
j
208
W
o
C
o
C
o
C
Internally Limited
T
c
Case Operating Temperature
Internally Limited
T
stg
Storage Temperature
-55 to 150
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
0.6
30
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
CLAMP
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage
Drain Current (V
in
= 0)
I
D
= 18 A
V
in
= 0
36
42
48
V
V
CLTH
I
D
= 2 mA
V
in
= 0
35
V
V
INCL
I
in
= -1 mA
-1
-0.3
V
I
DSS
V
DS
= 13 V
V
DS
= 25 V
V
in
= 0
V
in
= 0
50
200
μ
A
μ
A
μ
A
I
ISS
Supply Current from
Input Pin
V
DS
= 0 V
V
in
= 10 V
250
500
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
IN(th)
Input Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
in
I
D
+ Ii
n
= 1 mA
0.8
3
V
R
DS(on)
V
in
= 10 V
V
in
= 5 V
I
D
= 25 A
I
D
= 25 A
0.012
0.015
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Output Capacitance
V
DS
= 13 V
I
D
= 25 A
35
50
S
C
oss
V
DS
= 13 V
f = 1 MHz
V
in
= 0
2000
3000
pF
VNW50N04
2/11
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| VNW50N04A | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET |
| VNW50N04A_04 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:FULLY AUTOPROTECTED POWER MOSFET |
| VNW50N04-E | 功能描述:MOSFET N-Ch 42V 50A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| VNYI3 | 制造商:Carlo Gavazzi 功能描述: |
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