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參數(shù)資料
| 型號： | VN2406D |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET(最小漏源擊穿電壓240V，夾斷電流1.12A的N溝道增強型MOSFET晶體管) |
| 中文描述： | N溝道增強型MOSFET（最小漏源擊穿電壓240伏，夾斷電流1.12A的N溝道增強型MOSFET的晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 101K |
| 代理商： | VN2406D |
TN2410L, VN2406D/E, VN2410L/LS
Vishay Siliconix
www.siliconix.com FaxBack 408-970-5600
2
Document Number: 70204
S-58620—Rev. E, 21-Jun-99
Limits
TN2410L
VN2406D/L
VN2410L/LS
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 A
260
240
240
240
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.4
0.5
1.8
0.8
2
0.8
2
Gate-Body Leakage
B d L
I
GSS
V
DS
= 0 V, V
GS
=
15 V
100
100
T
J
= 125 C
500
500
nA
V
DS
= 0 V, V
GS
=
20 V
10
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 192 V, V
GS
= 0 V
0.01
1
A
T
J
= 125 C
1
100
V
DS
= 120 V, V
GS
= 0 V
10
10
T
J
= 125 C
500
500
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 4.5 V
0.8
0.25
A
V
DS
= 15 V, V
GS
= 10 V
1.5
1
1
D i S
Drain-Source On-Resistance
O R
O R
b
V
GS
= 2.5 V, I
D
= 0.1 A
7.5
10
10
V
GS
= 3.5 V, I
D
= 0.05 A
4.5
15
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.2 A
4
10
T
J
= 125 C
7.5
20
V
GS
= 10 V, I
D
= 0.5 A
3.5
6
10
T
J
= 125 C
6.5
14.8
24.7
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.2 A
500
100
mS
V
DS
= 10 V, I
D
= 0.5 A
530
300
300
Input Capacitance
C
iss
V
DS
= 25 V V
GS
= 0 V
f = 1 MHz
f 1 MHz
115
135
135
135
Output Capacitance
C
oss
30
50
50
50
pF
Reverse Transfer Capacitance
C
rss
5
20
20
20
Switching
c
Turn-On Time
O Ti
t
ON
V
DD
= 60 V R
L
= 150
I
D
0.4 A, V
= 10 V
R
G
= 25
5
35
t
d(on)
3
8
8
t
r
2
8
8
ns
Turn-Off Time
t
OFF
26
60
t
d(off)
20
23
23
t
f
6
24
34
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VNDB24
2%.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VN2406L | 功能描述:MOSFET 240V 6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2406L/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 200 mAmps， 240 Volts |
| VN2406L/ROTS | 制造商:Vishay Siliconix 功能描述:MIL FLOW -55 C TO +125 COPERATING TEMPERATURE - Tape and Reel |
| VN2406L-G | 功能描述:MOSFET 240V 6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2406L-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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