參數(shù)資料
型號(hào)： VMM650-01F
廠商： IXYS CORP
元件分類(lèi)： JFETs
英文描述： Dual Power HiPerFETTM Module
中文描述： 680 A, 100 V, 0.0018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 101K
代理商： VMM650-01F
2004 IXYS All rights reserved
1 - 2
VMM 650-01F
IXYS reserves the right to change limits, test conditions and dimensions.
Phaseleg Configuration
Dual Power
HiPerFET
TM
Module
V
DSS
I
D25
R
DS(on)
= 1.8 m
= 100 V
= 680 A
MOSFET T1 + T2
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C
100
V
V
GS
±20
V
I
D25
I
D80
T
C
= 25°C
T
C
= 80°C
①
①
680
500
A
A
I
F25
I
F80
(diode) T
C
= 25°C
(diode) T
C
= 80°C
①
①
680
500
A
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= I
D80
1.8
2.2
m
V
GSth
V
DS
= 20 V;
I
D
= 30 mA
2
4
V
I
DSS
V
DS
= 0.8 V
DSS
;
V
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
1
mA
mA
1.5
I
GSS
V
GS
= ±20 V; V
DS
= 0 V
1
μA
Q
g
Q
gs
Q
gd
1440
200
680
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
150
250
400
200
ns
ns
ns
ns
V
F
(diode) I
F
= 650 A;
V
GS
= 0 V
1.2
1.5
V
t
rr
(diode) I
F
= 650 A;
-di/dt = 500 A/μs; V
DS
= V
DSS
300
ns
R
thJC
R
thJS
①
additional current limitation by external leads
0.08 K/W
with heat transfer paste
0.12
K/W
Features
HiPerFET
TM
technology
– low R
– unclamped inductive switching (UIS)
capability
– dv/dt ruggedness
– fast intrinsic reverse diode
– low gate charge
thermistor
for internal temperature measurement
package
– low inductive current path
– screw connection to high current
main terminals
– use of non interchangeable
connectors for auxiliary terminals
possible
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
Applications
converters with high power density for
– main and auxiliary AC drives of
electric vehicles
– 4 quadrant DC drives
– power supplies
V
GS
= 10 V; V
DS
= 75 V; I
D
= I
D80
V
= 10 V; V
= 0.5 V
DSS
;
I
D
= I
D80
; R
G
= 0.47
Preliminary Data
3
1
2
8
9
11
10
6
7
NTC
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