- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359377 > VG36641641DTL-8H (Electronic Theatre Controls, Inc.) CMOS Synchronous Dynamic RAM PDF資料下載
參數(shù)資料
| 型號： | VG36641641DTL-8H |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | CMOS Synchronous Dynamic RAM |
| 中文描述： | 同步動態(tài)隨機(jī)存儲器的CMOS |
| 文件頁數(shù)： | 13/69頁 |
| 文件大?。?/td> | 1364K |
| 代理商： | VG36641641DTL-8H |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁當(dāng)前第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁
Document :1G5-0177
Rev.2
Page 13
VIS
VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
(3/3)
Notes
Note
1. All entries assume that CKE was active (High level) during the preceding clock cycle.
2. If both banks are idle, and CKE is inactive (Low level), the device will enter Power downmode.
All input buffers except CKE will be disabled.
3. Illegal to bank in specified states; Function may be legal in the bank indicated by BankAddress(BA), depending on the
state of that bank.
4. If both banks are idle, and CKE is inactive (Low level), the device will enter Self refresh mode.
All input buffers except CKE will be disabled.
5. Illegal if t
RCD
is not satisfied.
6. Illegal if t
RAS
is not satisfied.
7. Must satisfy burst interrupt condition.
8. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
9. Must mask preceding data which don’t satisfy t
DPL
.
10. Illegal if t
RRD
is not satisfied.
11. Illegal for single bank, but legal for other banks in multi-bank devices.
Current
CS
RAS
CAS
WE
Address
Command
Action
Write
recovering
H
X
X
X
X
DESL
Nop
Enter row active after t
DPL
Enter row active after t
DPL
L
H
H
H
X
NOP
Nop
L
H
H
L
X
BST
Nop
Enter row active after t
DPL
L
L
L
L
L
L
H
H
H
L
L
L
L
X
L
L
H
H
L
L
X
H
L
H
L
H
L
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op - Code
X
READ/READA
WRIT/WRITA
ACT
PRE/PALL
PEF/SELF
MRS
DESL
Start read, Determine AP
New write, Determine AP
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
→
→
→
8
3
3
Write
recovering
with auto
precharge
Nop
Enter precharge after t
DPL
Enter precharge after t
DPL
L
H
H
H
X
NOP
Nop
L
H
H
L
X
BST
Nop
Enter precharge after t
DPL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Nop Enter idle after t
RC
Nop Enter idle after t
RC
ILLEGAL
ILLEGAL
L
L
L
L
L
L
H
H
H
L
L
L
L
X
L
L
H
H
L
L
X
H
L
H
L
H
L
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op - Code
X
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
3,8,11
3,11
3,11
3
Auto
Refreshing
L
H
H
X
X
NOP/BST
L
L
L
H
L
L
L
L
H
L
L
X
H
H
H
L
L
H
L
X
H
H
L
X
X
X
X
X
H
L
X
X
X
X
X
X
X
X
X
X
READ/WRIT
ACT/PRE/PALL
REF/SELF/MRS ILLEGAL
DESL
NOP
BST
READ/WRITE
ACT/PRE/PALL/
REF/SELF/MRS
Mode regis-
ter
setting
Nop
Enter idle after 2 Clocks
Nop
ILLEGAL
ILLEGAL
ILLEGAL
Enter idle after 2 Clocks
→
→
→
→
→
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VG36641641DT | CMOS Synchronous Dynamic RAM |
| VG36641641BT | CMOS Synchronous Dynamic RAM |
| VG509A | EPROM-Based 8-bit micro-controller |
| VGFX200K-SERIES | ASIC |
| VGFX20K-SERIES | ASIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VG3664321412BT | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG36643241BT-10 | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG36643241BT-7 | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG36643241BT-8 | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG366440(80/16)41DT(L)-6 | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。