參數(shù)資料
型號: VG26VS17405DJ-5
廠商: VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 4M X 4 EDO DRAM, 50 ns, PDSO24
封裝: 0.300 INCH, PLASTIC, SOJ-26/24
文件頁數(shù): 23/27頁
文件大?。?/td> 253K
代理商: VG26VS17405DJ-5
Document:1G5-0124
Rev.1
Page 5
VIS VG26(V)(S)17405
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Absolute Maximum Ratings
Recommended DC Operating Conditions
Capacitance
Ta = 25°C, VCC = 5V
% or 3.3V
%, f = 1MHz
Note: 1. Capacitance measured with effective capacitance measuring method.
2. RAS, CAS = VIH to disable Dout.
Parameter
Symbol
Value
Unit
5V
Voltage on any pin relative to Vss
3.3V
VT
-1.0 to + 7.0
-0.5 to + 4.6
V
5V
Supply voltage relative to Vss
3.3V
VCC
-1.0 to + 7.0
-0.5 to + 4.6
V
Short circuit output current
IOUT
50
mA
Power dissipation
PD
1.0
W
Operating temperature
TOPT
0 to + 70
°C
Storage temperature
TSTG
-55 to + 125
°C
Parameter/Condition
Symbol
5 Volt Version
3.3 Volt Version
Unit
Min
Typ
Max
Min
Typ
Max
Supply Voltage
VCC
4.5
5.0
5.5
3.0
3.3
3.6
V
Input High Voltage, all inputs
VIH
2.4
-
VCC + 1.0
2.0
- VCC + 0.3
V
Input Low Voltage, all inputs
VIL
-1.0
-
0.8
-0.3
-
0.8
V
Parameter
Symbol
Typ
Max
Unit
Note
Input capacitance (Address)
CI1
-
5
pF
1
Input capacitance (RAS, CAS, OE, WE)
CI2
-
7
pF
1
Output capacitance
(Data-in, Data-out)
CI/O
-
7
pF
1, 2
10
±
10
±
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