參數(shù)資料
型號(hào): VE28F008
廠商: Intel Corp.
英文描述: 8 MBIT (1 MBIT x 8) FLASH MEMORY
中文描述: 8兆比特(1兆比特× 8)閃存
文件頁(yè)數(shù): 9/26頁(yè)
文件大?。?/td> 381K
代理商: VE28F008
VE28F008
Table 4. Status Register Definitions
WSMS
ESS
ES
BWS
VPPS
R
R
R
7
6
5
4
3
2
1
0
SR.7
e
WRITE STATE MACHINE STATUS
1
e
Ready
0
e
Busy
SR.6
e
ERASE SUSPEND STATUS
1
e
Erase Suspended
0
e
Erase in Progress/Completed
SR.5
e
ERASE STATUS
1
e
Error in Block Erasure
0
e
Successful Block Erase
SR.4
e
BYTE WRITE STATUS
1
e
Error in Byte Write
0
e
Successful Byte Write
SR.3
e
V
PP
STATUS
1
e
V
PP
Low Detect; Operation Abort
0
e
V
PP
OK
SR.2–SR.0
e
RESERVED FOR FUTURE
ENHANCEMENTS
These bits are reserved for future use and
should be masked out when polling the Status
Register.
NOTES:
RY/BY or the Write State Machine Status bit must first
be checked to determine byte write or block erase com-
pletion, before the Byte Write or Erase Status bit are
checked for success.
If the Byte Write AND Erase Status bits are set to ‘‘1’’s
during a block erase attempt, an improper command se-
quence was entered. Attempt the operation again.
If V
PP
low status is detected, the Status Register must be
cleared before another byte write or block erase opera-
tion is attempted.
The V
PP
Status bit, unlike an A/D converter, does not
provide continuous indication of V
PP
level. The WSM in-
terrogates the V
PP
level only after the byte write or block
erase command sequences have been entered and in-
forms the system if V
PP
has not been switched on. The
V
PP
Status bit is not guaranteed to report accurate feed-
back between V
PPL
and V
PPH
.
the Read Array command, until the WSM has com-
pleted its operation. The Read Array command is
functional when V
PP
e
V
PPL
or V
PPH
.
Intelligent Identifier Command
The VE28F008 contains an intelligent identifier oper-
ation, initiated by writing 90H into the Command
User Interface. Following the command write, a read
cycle from address 00000H retrieves the manufac-
turer code of 89H. A read cycle from address 01H
returns the device code of A2H. To terminate the
operation, it is necessary to write another valid com-
mand into the register. Like the Read Array com-
mand, the intelligent identifier command is functional
when V
PP
e
V
PPL
or V
PPH
.
Read Status Register Command
The VE28F008 contains a Status Register which
may be read to determine when a byte write or block
erase operation is complete, and whether that oper-
ation completed successfully. The Status Register
may be read at any time by writing the Read Status
Register command (70H) to the Command User In-
terface. After writing this command, all subsequent
read operations output data from the Status Regis-
ter, until another valid command is written to the
Command User Interface. The contents of the
Status Register are latched on the falling edge of OE
or CE, whichever occurs last in the read cycle. OE or
CE must be toggled to V
IH
before further reads to
update the Status Register latch. The Read Status
Register command functions when V
PP
e
V
PPL
or
V
PPH
.
Clear Status Register Command
The Erase Status and Byte Write Status bits are set
to ‘‘1’’s by the Write State Machine and can only be
reset by the Clear Status Register Command. These
bits indicate various failure conditions (see Table 4).
By allowing system software to control the resetting
of these bits, several operations may be performed
(such as cumulatively writing several bytes or eras-
ing multiple blocks in sequence). The Status Regis-
ter may then be polled to determine if an error oc-
curred during that sequence. This adds flexibility to
the way the device may be used.
Additionally, the V
PP
Status bit (SR.3) MUST be re-
set by system software before further byte writes or
block erases are attempted. To clear the Status
Register, the Clear Status Register command (50H)
is written to the Command User Interface. The Clear
Status Register command is functional when V
PP
e
V
PPL
or V
PPH
.
9
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