參數(shù)資料
型號: VE28F008
廠商: Intel Corp.
英文描述: 8 MBIT (1 MBIT x 8) FLASH MEMORY
中文描述: 8兆比特(1兆比特× 8)閃存
文件頁數(shù): 5/26頁
文件大小: 381K
代理商: VE28F008
VE28F008
271305–3
Figure 3. VE28F008 Array Interface to Intel386
TM
SL Microprocessor Superset through PI Bus
(Including RY/BY Masking and Selective Powerdown), for DRAM Backup during System SUSPEND,
Resident O/S and Applications and Motherboard Solid-State Disk.
PRINCIPLES OF OPERATION
The VE28F008 includes on-chip write automation to
manage write and erase functions. The Write State
Machine allows for: 100% TTL-level control inputs,
fixed power supplies during block erasure and byte
write, and minimal processor overhead with RAM-
like interface timings.
After initial device powerup, or after return from
deep powerdown mode (see Bus Operations), the
VE28F008 functions as a read-only memory. Manip-
ulation of external memory-control pins allow array
read, standby and output disable operations. Both
Status
Register
and
intelligent
identifier
can
also be accessed through the Command User Inter-
face when V
PP
e
V
PPL
.
This same subset of operations is also available
when high voltage is applied to the V
PP
pin. In addi-
tion, high voltage on V
PP
enables successful block
erasure and byte writing of the device. All functions
associated with altering memory contentsDbyte
write, block erase, status and intelligent identifierD
are accessed via the Command User Interface and
verified thru the Status Register.
Commands are written using standard microproces-
sor write timings. Command User Interface contents
serve as input to the WSM, which controls the block
5
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