參數(shù)資料
型號: V59C1512168QALP25E
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: 32M X 16 DDR DRAM, BGA92
封裝: GREEN, FBGA-92
文件頁數(shù): 69/79頁
文件大?。?/td> 1028K
代理商: V59C1512168QALP25E
71
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
IDD testing parameters
For purposes of IDD testing, the parameters in the IDD testing parameters table are to be utilized
NOTE 1 IDD specifications are tested after the device is properly initialized
NOTE 2 Input slew rate is specified by AC Parametric Test Condition
NOTE 3 IDD parameters are specified with ODT disabled.
NOTE 4 Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all
combinations of EMRS bits 10 and 11.
NOTE 5 For DDR2-667/800 testing, tCK in the Conditions should be interpreted as tCK(avg)
NOTE 6 Definitions for IDD
LOW
=
Vin
VILAC(max)
HIGH
=
Vin
VIHAC(min)
STABLE
=
inputs stable at a HIGH or LOW level
FLOATING
=
inputs at VREF = VDDQ/2
SWITCHING
=
inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control
signals, and inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals
not including masks or strobes.
IDD testing parameters
Speed
DDR2-800
DDR2-667
Units
Bin(CL-tRCD-tRP)
4-4-4
5-5-5
6-6-6
4-4-4
5-5-5
CL(IDD)
456
45
tCK
tRCD(IDD)
10
12.5
15
12
15
ns
tRC(IDD)
55
57.5
60
57
60
ns
tRRD(IDD)-1KB
7.5
ns
tRRD(IDD)-2KB
10
ns
tFAW(IDD)-1KB
35
37.5
ns
tFAW(IDD)-2KB
45
50
ns
tCK(IDD)
2.5
3
ns
tRASmin(IDD)
45
ns
tRASmax(IDD)
70000
ns
tRP(IDD)
10
12.5
15
12
15
ns
tRFC(IDD)-1Gb
127.5
IDD specification parameters and test conditions
(IDD values are for full operating range of Voltage and Temperature, Notes 1 - 6)
Symbol
Conditions
Max
Units
Notes
127.5
DDR2-1066
127.5
7-7-7
13.125
58.125
7.5
10
35
45
70000
13.125
7
1.875
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