參數(shù)資料
型號(hào): V58C2256404SAE5
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: 64M X 4 DDR DRAM, 0.65 ns, PDSO66
封裝: 0.400 X 0.875 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66
文件頁(yè)數(shù): 50/61頁(yè)
文件大小: 920K
代理商: V58C2256404SAE5
54
V58C2256(804/404/164)SA Rev. 1.8 March 2007
ProMOS TECHNOLOGIES
V58C2256(804/404/164)SA
Figure 43 - READ - WITH AUTO PRECHARGE
CK
/CK
COMMAND
NOP
PRE
READ
CKE
Col
n
RA
A10
BA0, BA1
Bank
x
*Bank
x
DON'T CARE
DO
n = Data Out from column n
Burst Length = 4 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DO
n
DIS AP = Disable Autoprecharge
* = "Don't Care", if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other commands may be valid at these times
DQ
DM
DQS
Case 1:
tAC/tDQSCK = min
Case 2:
tAC/tDQSCK = max
DQ
DQS
NOP
ACT
NOP
VALID
DIS AP
ONE BANK
ALL BANKS
tCK
tCH
tCL
tIS
tIH
tIS
tIH
tIS tIH
tRPRE
tRP
t
RA
CL = 2
t
min
HZ
t
max
HZ
t
min
LZ
t
max
LZ
t
max
LZ
t
min
AC
t
max
t
min
t
max
AC
Bank
x
x4:A0-A9
x8:A0-A8
x16:A0-A7
x4:A11
x8:A9, A11
x16:A8, A9, A11
DO
n
DO
n
DQSCK
RPST
DQSCK
RPST
t
min
LZ
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