參數(shù)資料
型號(hào): V58C2256404SAE5
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: 64M X 4 DDR DRAM, 0.65 ns, PDSO66
封裝: 0.400 X 0.875 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66
文件頁(yè)數(shù): 5/61頁(yè)
文件大?。?/td> 920K
代理商: V58C2256404SAE5
13
ProMOS TECHNOLOGIES
V58C2256(804/404/164)SA
V58C2256(804/404/164)SA Rev. 1.8 March 2007
Output Data (DQ) and Data Strobe (DQS) Timing Relative to the Clock (CK)
During Read Cycles
The minimum time during which the output data (DQ) is valid is critical for the receiving device (i.e., a mem-
ory controller device). This also applies to the data strobe during the read cycle since it is tightly coupled to
the output data. The minimum data output valid time (tDV) and minimum data strobe valid time (tDQSV) are de-
rived from the minimum clock high/low time minus a margin for variation in data access and hold time due to
DLL jitter and power supply noise.
(CAS Latency = 2.5; Burst Length = 4)
T0
T1
T2
T3
T4
NOP
D0
CK, CK
Command
DQS
DQ
D2
tDQSCK(max)
tDQSCK(min)
D1
tAC(min)
tAC(max)
D3
READ
NOP
Read Preamble and Postamble Operation
Prior to a burst of read data and given that the controller is not currently in burst read mode, the data strobe
signal (DQS), must transition from Hi-Z to a valid logic low. The is referred to as the data strobe “read pream-
ble” (t
RPRE). This transition from Hi-Z to logic low nominally happens one clock cycle prior to the first edge of
valid data.
Once the burst of read data is concluded and given that no subsequent burst read operations are initiated,
the data strobe signal (DQS) transitions from a logic low level back to Hi-Z. This is referred to as the data
strobe “read postamble” (tRPST). This transition happens nominally one-half clock period after the last edge of
valid data.
Consecutive or “gapless” burst read operations are possible from the same DDR SDRAM device with no
requirement for a data strobe “read” preamble or postamble in between the groups of burst data. The data
strobe read preamble is required before the DDR device drives the first output data off chip. Similarly, the
data strobe postamble is initiated when the device stops driving DQ data at the termination of read burst cycles.
相關(guān)PDF資料
PDF描述
V58C2512804SALS5I 64M X 8 DDR DRAM, 0.65 ns, PBGA60
V58C2512404SAT5I 128M X 4 DDR DRAM, 0.65 ns, PDSO66
V59C1G01408QAJ37E 256M X 4 DDR DRAM, 0.5 ns, PBGA68
V59C1G01408QAJ37I 256M X 4 DDR DRAM, 0.5 ns, PBGA68
V5D010EB4D SNAP ACTING/LIMIT SWITCH, SPDT, MOMENTARY, 0.5A, 125VDC, 4.4mm, PANEL MOUNT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
V58C2256804S 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
V58C2256804SAT-5 制造商:Mosel Vitelic Corporation 功能描述:SDRAM, DDR, 32M x 8, 66 Pin, Plastic, TSSOP
V58C265164S 制造商:MOSEL 制造商全稱:MOSEL 功能描述:64 Mbit DDR SDRAM 2.5 VOLT 4M X 16
V58C265404S 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 16M X 4 DDR SDRAM 4 BANKS X 4Mbit X 4
V58C265804S 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 8M X 8 DDR SDRAM 4 BANKS X 2Mbit X 8