參數(shù)資料
型號(hào)： V58C2256164SBLJ5B
廠商： PROMOS TECHNOLOGIES INC
元件分類： DRAM
英文描述： 16M X 16 DDR DRAM, 0.65 ns, PBGA60
封裝： LEAD FREE, MO-233, FBGA-60
文件頁數(shù)： 53/62頁
文件大小： 983K
代理商： V58C2256164SBLJ5B
57
ProMOS TECHNOLOGIES
V58C2256(804/404/164)SB
V58C2256(804/404/164)SB Rev. 1.0 November 2003
Figure 45 - WRITE - WITHOUT AUTO PRECHARGE
CK
/CK
COMMAND
NOP
WRITE
CKE
Col
n
RA
A10
BA0, BA1
Bank
x
*Bank
x
BA
DON'T CARE
DI
n = Data In for column n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are applied in the programmed order following DI
n
DIS AP = Disable Autoprecharge
* = "Don't Care", if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other valid commands may be possible at these times
NOP
PRE
NOP
VALID
ACT
NOP
DIS AP
ONE BANK
ALL BANKS
tCK
tCH
tCL
tIS
tIH
tIS
tIH
tRP
tIH
tIS tIH
RA
x4:A0-A9
x8:A0-A8
x16:A0-A7
x4:A11
x8:A9, A11
x16:A8, A9, A11
DQ
DM
DQS
DI
n
t
tDQSS
t
Case 1:
tDQSS = min
Case 2:
tDQSS = max
DQ
DM
DQS
DI
n
t
tWR
tDQSS
t
WPST
DQSH
DQSL
tWPRES
WPST
DQSH
DQSL
WPRE
WPRES
tWPRE
tDSS
tDSH
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