參數(shù)資料
型號(hào): V54C3128
廠商: Mosel Vitelic, Corp.
英文描述: 128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
中文描述: 128Mbit SDRAM的3.3伏,BGA封裝
文件頁數(shù): 21/45頁
文件大小: 871K
代理商: V54C3128
21
V54C3128(16/80/40)4V(BGA) Rev. 1.2 September 2001
MOSEL VITELIC
V54C3128(16/80/40)4V(BGA)
6.2 Write Interrupted by a Read
(Burst Length = 4, CAS latency = 2, 3)
7. Burst Write with Auto-Precharge
Burst Length = 2, CAS latency = 2, 3)
COMMAND
NOP
WRITE A
READ B
NOP
NOP
NOP
NOP
NOP
NOP
t
CK2,
I/O
s
CAS latency = 2
DIN A0
t
CK3,
I/O
s
CAS latency = 3
DIN A0
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT B3
DOUT B0
DOUT B1
DOUT B2
DOUT B3
don
t care
don
t care
don
t care
DOUT B0
DOUT B1
DOUT B2
Input data must be removed from the I/O
s at least one clock
cycle before the Read dataAPpears on the outputs to avoid
data contention.
COMMAND
NOP
NOP
NOP
WRITE A
Auto-Precharge
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
BANK A
ACTIVE
NOP
NOP
DIN A0
DIN A1
I/O
s
CAS latency = 3
I/O
s
CAS latency = 2
Begin Autoprecharge
Bank can be reactivated after trp
t
WR
t
RP
DIN A0
DIN A1
t
WR
t
RP
NOP
*
相關(guān)PDF資料
PDF描述
V54C3128164VS SPINY EEL- EPP
V54C3128164VT E32 FAMILY - LEAD FREE
V54C3128804VAT7 HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8
V54C3128804VAT8 HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8
V54C3128804VT MORAY EEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
V54C3128164VBGA 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
V54C3128164VBI7 制造商:PROMOS 功能描述: 制造商:ProMOS Technologies Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
V54C3128164VS 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
V54C3128164VT 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
V54C3128404VBGA 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, BGA PACKAGE