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參數(shù)資料
| 型號： | V54C3128164VT |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | E32 FAMILY - LEAD FREE |
| 中文描述： | 128Mbit SDRAM的3.3伏，第二的TSOP / SOC的包裝8米× 16，16米x 8，32 × 4 |
| 文件頁數(shù)： | 1/49頁 |
| 文件大小： | 694K |
| 代理商： | V54C3128164VT |
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MOSEL VITELIC
1
V54C3128(16/80/40)4V(T/S)
128Mbit SDRAM
3.3 VOLT, TSOP II / SOC PACKAGE
8M X 16, 16M X 8, 32M X 4
V54C3128(16/80/40)4V(T/S) Rev. 1.2 August 2002
PRELIMINARY
6
7PC
7
8PC
System Frequency (f
CK
)
166 MHz
143 MHz
143 MHz
125 MHz
Clock Cycle Time (t
CK3
)
6 ns
7 ns
7 ns
8 ns
Clock Access Time (t
AC3
) CAS Latency = 3
5.4 ns
5.4 ns
5.4 ns
6 ns
Clock Access Time (t
AC2
) CAS Latency = 2
5.4 ns
5.4 ns
6 ns
6 ns
Features
■
4 banks x 2Mbit x 16 organization
■
4 banks x 4Mbit x 8 organization
■
4 banks x 8Mbit x 4 organization
■
High speed data transfer rates up to 166 MHz
■
Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
■
Single Pulsed RAS Interface
■
Data Mask for Read/Write Control
■
Four Banks controlled by BA0 & BA1
■
Programmable CAS Latency: 2, 3
■
Programmable Wrap Sequence: Sequential or
Interleave
■
Programmable Burst Length:
1, 2, 4, 8 for Sequential Type
1, 2, 4, 8 for Interleave Type
■
Multiple Burst Read with Single Write Operation
■
Automatic and Controlled Precharge Command
■
Random Column Address every CLK (1-N Rule)
■
Power Down Mode
■
Auto Refresh and Self Refresh
■
Refresh Interval: 4096 cycles/64 ms
■
Available in 60-ball SOC BGA and 54 Pin
TSOPII
■
LVTTL Interface
■
Single +3.3 V
±
0.3 V Power Supply
Description
The V54C3128(16/80/40)4V(T/S) is a four bank
Synchronous DRAM organized as 4 banks x 2Mbit
x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4.
The V54C3128(16/80/40)4V(T/S) achieves high
speed data transfer rates up to 166 MHz by employ-
ing a chip architecture that prefetches multiple bits
and then synchronizes the output data to a system
clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
166 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Power
Temperature
Mark
T/S
6
7PC
7
8PC
Std.
L
0
°
C to 70
°
C
Blank
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V54C3128804VAT7 | HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8 |
| V54C3128804VAT8 | HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8 |
| V54C3128804VT | MORAY EEL |
| V54C3128804VS | 128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4 |
| V54C3128804VAT | HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V54C3128404VBGA | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, BGA PACKAGE |
| V54C3128404VS | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4 |
| V54C3128404VT | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4 |
| V54C3128804VAT | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8 |
| V54C3128804VAT7 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8 |
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