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參數(shù)資料
| 型號(hào)： | V53C818H |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM |
| 中文描述： | 高性能EDO公司為512k × 16頁模式的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器 |
| 文件頁數(shù)： | 8/18頁 |
| 文件大?。?/td> | 231K |
| 代理商： | V53C818H |
8
V53C818H Rev. 1.2 May 1997
MOSEL VITELIC
V53C818H
Truth Table
Notes:
1. Byte Write cycles LCAS or UCAS active.
2.
Byte Read cycles LCAS or UCAS active.
3.
Only one of the two CAS must be active (LCAS or UCAS).
Function
RAS
LCAS
UCAS
WE
OE
ADDRESS
I/O
Notes
Standby
H
H
H
X
X
X
High-Z
Read: Word
L
L
L
H
L
ROW/COL
Data Out
Read: Lower Byte
L
L
H
H
L
ROW/COL
Lower Byte, Data-Out
Upper Byte, High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL
Lower Byte, High-Z
Upper Byte, Data-Out
Write: Word (Early-Write)
L
L
L
L
X
ROW/COL
Data-In
Write: Lower Byte (Early)
L
L
H
L
X
ROW/COL
Lower Byte, Data-In
Upper Byte, High-Z
Read: Upper Byte (Early)
L
H
L
L
X
ROW/COL
Lower Byte, High-Z
Upper Byte, Data-In
Read-Write
L
L
L
H
→
L
L
→
H
ROW/COL
Data-Out, Data-In
1, 2
EDO Page-Mode Read
L
H
→
L
H
→
L
H
L
COL
Data-Out
2
EDO Page-Mode Write
L
H
→
L
H
→
L
L
X
COL
Data-In
2
EDO Page-Mode Read-Write
L
H
→
L
H
→
L
H
→
L
L
→
H
COL
Data-Out, Data-In
1, 2
Hidden Refresh Read
L
→
H
→
L
L
L
H
L
ROW/COL
Data-Out
2
RAS-Only Refresh
L
H
H
X
X
ROW
High-Z
CBR Refresh
H
→
L
L
L
X
X
X
High-Z
3
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