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參數(shù)資料
| 型號： | V53C818H |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM |
| 中文描述： | 高性能EDO公司為512k × 16頁模式的CMOS動(dòng)態(tài)隨機(jī)存儲器 |
| 文件頁數(shù)： | 4/18頁 |
| 文件大?。?/td> | 231K |
| 代理商： | V53C818H |
4
V53C818H Rev. 1.2 May 1997
MOSEL VITELIC
V53C818H
DC and Operating Characteristics
T
A
= 0
°
C to 70
°
C, V
CC
(1-2)
= 0 V, unless otherwise specified.
= 5 V
±
10%, V
SS
Symbol
Parameter
Access
Time
V53C818H
Unit
Test Conditions
Notes
Min.
Typ.
Max.
I
LI
Input Leakage Current
(any input pin)
–10
10
μ
A
V
SS
≤
V
IN
≤
V
CC
I
LO
Output Leakage Current
(for High-Z State)
–10
10
μ
A
V
RAS, CAS at V
SS
≤
V
OUT
≤
V
CC
IH
I
CC1
V
Operating
CC
Supply Current,
30
240
mA
t
RC
= t
RC
(min.)
1, 2
35
230
40
220
45
210
50
200
I
CC2
V
TTL Standby
CC
Supply Current,
4
mA
RAS, CAS at V
other inputs
IH
≥
V
SS
I
CC3
V
RAS-Only Refresh
CC
Supply Current,
30
240
mA
t
RC
= t
RC
(min.)
2
35
230
40
220
45
210
50
200
I
CC4
V
EDO Page Mode Operation
CC
Supply Current,
30
230
mA
Minimum Cycle
1, 2
35
220
40
210
45
200
50
190
I
CC5
V
Standby, Output Enabled
other inputs
≥
CC
Supply Current,
V
SS
2
mA
RAS = V
IH
, CAS = V
IL
1
I
CC6
V
CMOS Standby
CC
Supply Current,
2
mA
RAS
CAS
All other inputs
≥
≥
V
V
CC
– 0.2 V,
– 0.2 V,
CC
≥
V
SS
V
CC
Supply Voltage
4.5
5.0
5.5
V
V
IL
Input Low Voltage
–1
0.8
V
3
V
IH
Input High Voltage
2.4
V
CC
+ 1
V
3
V
OL
Output Low Voltage
0.4
V
I
OL
= 4.2 mA
V
OH
Output High Voltage
2.4
V
I
OH
= –5.0 mA
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