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參數(shù)資料
| 型號： | V53C818H |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM |
| 中文描述： | 高性能EDO公司為512k × 16頁模式的CMOS動態(tài)隨機存儲器 |
| 文件頁數(shù)： | 5/18頁 |
| 文件大?。?/td> | 231K |
| 代理商： | V53C818H |
5
V53C818H Rev. 1.2 May 1997
MOSEL VITELIC
V53C818H
AC Characteristics
T
A
= 0
°
C to 70
°
C, V
CC
= +5V
±
10%, V
SS
= 0V unless otherwise noted
AC Test conditions, input pulse levels 0 to 3V
#
Symbol Parameter
30
35
40
45
50
Unit Notes
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
1
t
RAS
RAS Pulse Width
30
75K
35
75K
40
75K
45
75K
50
75K
ns
2
t
RC
Read or Write Cycle Time
65
70
75
80
90
ns
3
t
RP
RAS Precharge Time
25
25
25
25
30
ns
4
t
CSH
CAS Hold Time
30
35
40
45
50
ns
5
t
CAS
CAS Pulse Width
5
6
7
8
9
ns
6
t
RCD
RAS to CAS Delay
15
20
16
24
17
28
18
32
19
36
ns
7
t
RCS
Read Command Setup Time
0
0
0
0
0
ns
4
8
t
ASR
Row Address Setup Time
0
0
0
0
0
ns
9
t
RAH
Row Address Hold Time
5
6
7
8
9
ns
10
t
ASC
Column Address Setup Time
0
0
0
0
0
ns
11
t
CAH
Column Address Hold Time
5
5
5
6
7
ns
12
t
RSH (R)
RAS Hold Time (Read Cycle)
10
10
10
10
10
ns
13
t
CRP
CAS to RAS Precharge Time
5
5
5
5
5
ns
14
t
RCH
Read Command Hold Time
Referenced to CAS
0
0
0
0
0
ns
5
15
t
RRH
Read Command Hold Time
Referenced to RAS
0
0
0
0
0
ns
5
16
t
ROH
RAS Hold Time Referenced
to OE
6
7
8
9
10
ns
17
t
OAC
Access Time from OE
10
11
12
13
14
ns
12
18
t
CAC
Access Time from CAS
10
11
12
13
14
ns
6, 7, 14
19
t
RAC
Access Time from RAS
30
35
40
45
50
ns
6, 8, 9
20
t
CAA
Access Time from Column
Address
16
18
20
22
24
ns
6, 7, 10
21
t
LZ
OE or CAS to Low-Z Output
0
0
0
0
0
ns
16
22
t
HZ
OE or CAS to High-Z Output
0
5
0
6
0
6
0
7
0
8
ns
16
23
t
AR
Column Address Hold Time
from RAS
26
28
30
35
40
ns
24
t
RAD
RAS to Column Address
Delay Time
10
14
11
17
12
20
13
23
14
26
ns
11
25
t
RSH (W)
RAS or CAS Hold Time in
Write Cycle
10
10
10
10
10
ns
26
t
CWL
Write Command to CAS
Lead Time
10
11
12
13
14
ns
27
t
WCS
Write Command Setup Time
0
0
0
0
0
ns
12, 13
28
t
WCH
Write Command Hold Time
5
5
5
6
7
ns
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