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參數(shù)資料
| 型號(hào)： | V53C808H |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | HIGH PERFORMANCE 1M x 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH |
| 中文描述： | 高性能100萬× 8位EDO公司頁面模式的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器可選自刷新 |
| 文件頁數(shù)： | 6/18頁 |
| 文件大?。?/td> | 136K |
| 代理商： | V53C808H |
6
V53C808H Rev. 1.5 April 1998
MOSEL V ITELIC
V53C808H
32
t
DS
Data in Setup Time
0
0
0
0
ns
14
33
t
DH
Data in Hold Time
4
5
6
7
ns
14
34
t
WOH
Write to OE Hold Time
5
6
7
8
ns
14
35
t
OED
OE to Data Delay Time
5
6
7
8
ns
14
36
t
RWC
Read-Modify-Write Cycle Time
105
110
115
130
ns
37
t
RRW
Read-Modify-Write Cycle RAS
Pulse Width
70
75
80
87
ns
38
t
CWD
CAS to WE Delay
28
30
32
34
ns
12
39
t
RWD
RAS to WE Delay in
54
58
62
68
ns
12
40
t
CRW
CAS Pulse Width (RMW)
46
48
50
52
ns
41
t
AWD
Col. Address to WE Delay
35
38
41
42
ns
12
42
t
PC
EDO Page Mode Read or Write
Cycle Time
14
15
17
19
ns
43
t
CP
CAS Precharge Time
4
5
6
7
ns
44
t
CAR
Column Address to RAS Setup Time
18
20
22
24
ns
45
t
CAP
Access Time from Column Precharge
21
23
25
27
ns
7
46
t
DHR
Data in Hold Time Referenced to RAS
28
30
35
40
ns
47
t
CSR
CAS Setup Time
CAS-before-RAS Refresh
10
10
10
10
ns
48
t
RPC
RAS to CAS Precharge Time
0
0
0
0
ns
49
t
CHR
CAS Hold Time
CAS-before-RAS Refresh
8
8
10
12
ns
50
t
PCM
EDO Page Mode Read-Modify-Write
Cycle Time
58
60
65
70
ns
51
t
T
Transition Time (Rise and Fall)
3
50
3
50
3
50
3
50
ns
15
52
t
REF
Refresh Interval (1024 Cycles)
16
16
16
16
ms
53
t
COH
Output Hold After CAS Low
5
5
5
5
ns
Optional Self Refresh
54
t
RASS
RAS Pulse Width During Self Refresh
100
100
100
100
m
s
18
55
t
RPS
RAS Precharge Time During Self
Refresh
100
100
100
100
ns
18
56
t
CHS
CAS Hold Time Width During Self
Refresh
100
100
100
100
ns
18
57
t
CHD
CAS Low Time During Self
Refresh
100
100
100
100
m
s
18
#
Symbol
Parameter
35
40
45
50
Unit
Notes
Min. Max. Min. Max. Min. Max. Min. Max.
AC Characteristics
(Cont’d)
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