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參數(shù)資料
| 型號： | V53C808H |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | HIGH PERFORMANCE 1M x 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH |
| 中文描述： | 高性能100萬× 8位EDO公司頁面模式的CMOS動態(tài)隨機(jī)存儲器可選自刷新 |
| 文件頁數(shù)： | 3/18頁 |
| 文件大?。?/td> | 136K |
| 代理商： | V53C808H |
MOSEL V ITELIC
V53C808H
3
V53C808H Rev. 1.5 April 1998
Absolute Maximum Ratings*
Ambient Temperature
Under Bias................................. –10
Storage Temperature (plastic)..... –55
Voltage Relative to V
Data Output Current .....................................50 mA
Power Dissipation..........................................1.4 W
°
C to +125
C to +80
°
°
C
C
°
SS
.................–1.0 V to +7.0 V
*Note:
Operation above Absolute Maximum Ratings can
adversely affect device reliability.
Capacitance*
T
A
= 25
°
C, V
CC
= 5 V
±
10%, f = 1 MHz
* Note:
Capacitance is sampled and not 100% tested
Symbol
Parameter
Typ.
Max.
Unit
C
IN1
Address Input
3
4
pF
C
IN2
RAS, CAS, WE, OE
4
5
pF
C
OUT
Data Input/Output
5
7
pF
Block Diagram
A0
A1
A7
A9
SENSE AMPLIFIERS
REFRESH
COUNTER
VCC
VSS
10
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
A
A
X0-X
R
D
1024
MEMORY
ARRAY
1024 x 1024 x8
COLUMN DECODERS
DATA I/O BUS
Y0-Y9
1024 x 8
I/O
BUFFER
OE CLOCK
GENERATOR
WE CLOCK
GENERATOR
CAS CLOCK
GENERATOR
RAS CLOCK
GENERATOR
OE
WE
CAS
RAS
9
808H-04
1M x 8
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