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參數(shù)資料
| 型號(hào)： | V53C808H |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | HIGH PERFORMANCE 1M x 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH |
| 中文描述： | 高性能100萬(wàn)× 8位EDO公司頁(yè)面模式的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器可選自刷新 |
| 文件頁(yè)數(shù)： | 4/18頁(yè) |
| 文件大小： | 136K |
| 代理商： | V53C808H |
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4
V53C808H Rev. 1.5 April 1998
MOSEL V ITELIC
V53C808H
DC and Operating Characteristics
T
A
= 0
°
C to 70
°
C, V
CC
= 5 V
±
10%, V
SS
= 0 V, unless otherwise specified.
Symbol
Parameter
Access
Time
V53C808H
Unit
Test Conditions
Notes
Min.
Typ.
Max.
I
LI
Input Leakage Current
(any input pin)
–10
10
m
A
V
SS
￡
V
IN
￡
V
CC
I
LO
Output Leakage Current
(for High-Z State)
–10
10
m
A
V
RAS, CAS at V
SS
￡
V
OUT
￡
V
CC
IH
I
CC1
V
Operating
CC
Supply Current,
35
160
mA
t
RC
= t
RC
(min.)
1, 2
40
150
45
145
50
135
I
CC2
V
TTL Standby
CC
Supply Current,
2
mA
RAS, CAS at V
other inputs
IH
3
V
SS
I
CC3
V
RAS-Only Refresh
CC
Supply Current,
35
160
mA
t
RC
= t
RC
(min.)
2
40
150
45
145
50
135
I
CC4
V
EDO Page Mode
Operation
CC
Supply Current,
35
95
mA
Minimum cycle
1, 2
40
90
45
85
50
80
I
CC5
V
Standby, Output Enabled
CC
Supply Current,
2.0
mA
RAS = V
other inputs
IH
, CAS = V
3
V
IL
SS
1
I
CC6
V
CMOS Standby
CC
Supply Current,
2.0
mA
RAS
CAS
All other inputs
3
3
V
V
CC
– 0.2 V,
– 0.2 V,
CC
3
V
SS
I
CC7
Self Refresh Current
400
m
A
CBR Cycle with t
(Min.) and CAS = V
WE = V
CC
D
IN
= V
CC
RAS
3
;
t
RASS
IL
–0.2V; A0–A8 and
–0.2V
V
CC
Supply Voltage
4.5
5.0
5.5
V
V
IL
Input Low Voltage
–1
0.8
V
3
V
IH
Input High Voltage
2.4
V
CC
+ 1
V
3
V
OL
Output Low Voltage
0.4
V
I
OL
= 2 mA
V
OH
Output High Voltage
2.4
V
I
OH
= –2 mA
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