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CHAPTER 23 ELECTRICAL SPECIFICATIONS ((A2) grade product)
User’s Manual U17446EJ5V0UD
368
(A2) grade product TA =
40 to +125°C
Flash Memory Programming Characteristics (TA = –40 to +105
°C, 2.7 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Supply current
IDD
VDD = 5.5 V
7.0
mA
Erasure count
Note 1
(per 1 block)
NERASE
TA =
40 to +105°C
1000
Times
4.5 V
≤ VDD ≤ 5.5 V
0.8
s
3.5 V
≤ VDD < 4.5 V
1.0
s
TA =
10 to +105°C,
NERASE
≤ 100
2.7 V
≤ VDD < 3.5 V
1.2
s
4.5 V
≤ VDD ≤ 5.5 V
4.8
s
3.5 V
≤ VDD < 4.5 V
5.2
s
TA =
10 to +105°C,
NERASE
≤ 1000
2.7 V
≤ VDD < 3.5 V
6.1
s
4.5 V
≤ VDD ≤ 5.5 V
1.6
s
3.5 V
≤ VDD < 4.5 V
1.8
s
TA =
40 to +105°C,
NERASE
≤ 100
2.7 V
≤ VDD < 3.5 V
2.0
s
4.5 V
≤ VDD ≤ 5.5 V
9.1
s
3.5 V
≤ VDD < 4.5 V
10.1
s
Chip erase time
TCERASE
TA =
40 to +105°C,
NERASE
≤ 1000
2.7 V
≤ VDD < 3.5 V
12.3
s
4.5 V
≤ VDD ≤ 5.5 V
0.4
s
3.5 V
≤ VDD < 4.5 V
0.5
s
TA =
10 to +105°C,
NERASE
≤ 100
2.7 V
≤ VDD < 3.5 V
0.6
s
4.5 V
≤ VDD ≤ 5.5 V
2.6
s
3.5 V
≤ VDD < 4.5 V
2.8
s
TA =
10 to +105°C,
NERASE
≤ 1000
2.7 V
≤ VDD < 3.5 V
3.3
s
4.5 V
≤ VDD ≤ 5.5 V
0.9
s
3.5 V
≤ VDD < 4.5 V
1.0
s
TA =
40 to +105°C,
NERASE
≤ 100
2.7 V
≤ VDD < 3.5 V
1.1
s
4.5 V
≤ VDD ≤ 5.5 V
4.9
s
3.5 V
≤ VDD < 4.5 V
5.4
s
Block erase time
TBERASE
TA =
40 to +105°C,
NERASE
≤ 1000
2.7 V
≤ VDD < 3.5 V
6.6
s
Byte write time
TWRITE
TA =
40 to +105°C, NERASE ≤ 1000
150
μs
Per 1 block
6.8
ms
Internal verify
TVERIFY
Per 1 byte
27
μs
Blank check
TBLKCHK
Per 1 block
480
μs
Total loss
PT
Note 3
TA =
40 to +105°C
120
mW
Retention years
TA = 85
°CNote 2, NERASE ≤ 1000
10
Years
Notes 1. Depending on the erasure count (NERASE), the erase time varies. Refer to the chip erase time and block
erase time parameters.
2. When the average temperature when operating and not operating is 85
°C.
Remark When a product is first written after shipment, “erase
→ write” and “write only” are both taken as one rewrite.
(Note 3 is listed on the next page.)