參數(shù)資料
型號(hào)： UPD4616112F9-BC90-BC2
廠商： NEC Corp.
英文描述： 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
中文描述： 1,600位CMOS移動(dòng)指明內(nèi)存100萬(wàn)字由16位
文件頁(yè)數(shù)： 21/32頁(yè)
文件大小： 220K
代理商： UPD4616112F9-BC90-BC2
Data Sheet M15085EJ5V0DS
21
μ
PD4616112
#
Write Cycle Timing Chart 5 (/LB, /UB Controlled 2)
/CS (Input)
Address (Input)
/LB, /UB (Input)
t
DW
t
DH
I/O (Input)
t
SKEW
t
SKEW
High impedance
High impedance
High impedance
t
WC1
t
AS
t
BW
t
BW
t
WR
t
DW
t
DH
t
WC1
t
WR
t
WC
/WE (Input)
t
WP
Data in
Data in
Note
Note
Cautions 1. During address transition, at least one of pins /CS, /WE should be inactivated.
2. Do not input data to the I/O pins while they are in the output state.
3. If the address is changed using a value that is either lower than the minimum value or higher
than the maximum value for the write cycle time (t
WC
), none of the data can be guaranteed.
Note
If /LB and /UB are changed at the same time with /CS low level and a continuous write operation toggling /WE
is performed, make settings so that the sum (t
WC
) of the identical address write cycle time (t
WC1
) is 10
μ
s or
less.
Remark
Write operation is done during the overlap time of a Low /CS, /WE, /LB and/or /UB.
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