參數(shù)資料
型號: UPD4664312-X
廠商: NEC Corp.
英文描述: 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
中文描述: 6400位CMOS移動指明內(nèi)存分詞由16位溫度范圍
文件頁數(shù): 1/36頁
文件大?。?/td> 299K
代理商: UPD4664312-X
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2001
Document No. M15867EJ5V0DS00 (5th edition)
Date Published August 2002 NS CP (K)
Printed in Japan
MOS INTEGRATED CIRCUIT
μ
PD4664312-X
64M-BIT CMOS MOBILE SPECIFIED RAM
4M-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
PRELIMINARY DATA SHEET
The mark
shows major revised points.
Description
The
μ
PD4664312-X is a high speed, low power, 67,108,864 bits (4,194,304 words by 16 bits) CMOS Mobile
Specified RAM featuring Low Power Static RAM compatible function and pin configuration.
The
μ
PD4664312-X is fabricated with advanced CMOS technology using one-transistor memory cell.
The
μ
PD4664312-X is packed in 93-pin TAPE FBGA.
Features
4,194,304 words by 16 bits organization
Fast access time: 65, 75 ns (MAX.)
Fast page access time: 18, 25 ns (MAX.)
Byte data control: /LB (I/O0 to I/O7), /UB (I/O8 to I/O15)
Low voltage operation:2.7 to 3.1 V (-B65X)
2.7 to 3.1 V (Chip), 1.65 to 2.1 V (I/O) (-BE75X)
Operating ambient temperature: T
A
= –25 to +85 °C
Output Enable input for easy application
Chip Enable input: /CS pin
Standby Mode input: MODE pin
Standby Mode1: Normal standby (Memory cell data hold valid)
Standby Mode2: Density of memory cell data hold is variable
μ
PD4664312
Access
Operating supply
Operating
Supply current
time
voltage
ambient
At operating
At standby
μ
A (MAX.)
ns (MAX.)
V
temperature
mA (MAX.)
Density of data hold
Chip
I/O
°C
64M bits 16M bits 8M bits 4M bits
0M bit
-B65X
65
2.7 to 3.1
–25 to +85
45
100
60
50
45
10
-BE75X
Note
75
2.7 to 3.1 1.65 to 2.1
40
Note
Under development
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