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參數(shù)資料
| 型號： | UPD4616112 |
| 廠商： | NEC Corp. |
| 英文描述： | 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT |
| 中文描述： | 1,600位CMOS移動指明內存100萬字由16位 |
| 文件頁數(shù)： | 22/32頁 |
| 文件大?。?/td> | 220K |
| 代理商： | UPD4616112 |
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Data Sheet M15085EJ5V0DS
22
μ
PD4616112
#
Write Cycle Timing Chart 6 (/LB, /UB Independent Controlled 1)
t
WP
t
AS
t
CW
I/O0 - 7 (Input)
t
WR
t
WC1
/WE (Input)
/CS (Input)
Address (Input)
/LB (Input)
t
BW
High impedance
High impedance
/UB (Input)
t
BW
t
WC1
t
DW
t
DH
t
WR
I/O8 - 15 (Input)
High impedance
High impedance
t
DW
t
DH
t
WC
Data in
Data in
Note
Note
Cautions 1. During address transition, at least one of pins /CS, /WE should be inactivated.
2. Do not input data to the I/O pins while they are in the output state.
3. If the address is changed using a value that is either lower than the minimum value or higher
than the maximum value for the write cycle time (t
WC
), none of the data can be guaranteed.
Note
If /LB and /UB are changed at the same time with /CS low level and a continuous write operation toggling /WE
is performed, make settings so that the sum (t
WC
) of the identical address write cycle time (t
WC1
) is 10
μ
s or
less.
Remark
Write operation is done during the overlap time of a Low /CS, /WE, /LB and/or /UB.
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