參數(shù)資料
型號： UPA835TF-T1
廠商： NEC Corp.
英文描述： NPN SILICON EPITAXIAL TWIN TRANSISTOR
中文描述： NPN硅外延雙晶體管
文件頁數(shù)： 2/12頁
文件大?。?/td> 71K
代理商： UPA835TF-T1
Data Sheet P14555EJ1V0DS00
2
μ
PA835TC
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Ratings
Parameter
Symbol
Q1
Q2
Unit
Collector to Base Voltage
V
CBO
9
20
V
Collector to Emitter Voltage
V
CEO
6
12
V
Emitter to Base Voltage
V
EBO
2
3
V
Collector Current
I
C
30
100
mA
Total Power Dissipation
P
T
Note
180 in 1 element
200 in 1 element
mW
230 in 2 elements
Junction Temperature
T
j
150
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
Note
Mounted on 1.08 cm
2
×
1.0 mm glass epoxy substrate.
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
(1) Q1
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
μ
A
DC Current Gain
h
FE
V
CE
= 3 V, I
C
= 10 mA
Note 1
75
150
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
10.0
12.0
GHz
Feedback Capacitance
C
re
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.4
0.7
pF
Insertion Power Gain
|
S
21e
|
2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
7.0
8.5
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
1.5
2.5
dB
Notes 1.
Pulse Measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
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