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參數(shù)資料
| 型號： | UPA835TC-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
| 中文描述： | NPN硅外延晶體管2不同元素在一個(gè)平面，鉛6引腳薄型包裝超超MINIMOLD |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 71K |
| 代理商： | UPA835TC-T1 |
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
NPN SILICON RF TWIN TRANSISTOR
μ
PA835TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
Document No. P14555EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
1999
DESCRIPTION
The
μ
PA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to
UHF band.
FEATURES
Low noise
Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, V
CE
= 3 V, I
C
= 3 mA
Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
High gain
Q1 :
|
S
21e
|
Q2 :
|
S
21e
|
Flat-lead 6-pin thin-type ultra super minimold package
Built-in 2 different transistors (2SC5010, 2SC5006)
2
= 8.5 dB TYP. @ f = 2 GHz, V
CE
= 3 V, I
C
= 10 mA
2
= 9.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
BUILT-IN TRANSISTORS
Q1
Q2
3-pin ultra super minimold part No.
2SC5010
2SC5006
ORDERING INFORMATION
Part Number
Package
Quantity
Supplying Form
μ
PA835TC
Loose products
(50 pcs)
μ
PA835TC-T1
Flat-lead 6-pin
thin-type ultra
super minimold
Taping products
(3 kp/reel)
8 mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation
side of the tape.
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
μ
PA835TC.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA835TC | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
| UPA836 | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE |
| UPA836TC | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA836TC-T1 | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA836TF | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA835TF | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA835TF-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA836 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE |
| UPA836TC | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA836TC-T1 | 功能描述:射頻雙極小信號晶體管 NPN Silicon RF Twin RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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