參數(shù)資料
型號(hào): UPA836TC-T1
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TWIN TRANSISTOR
中文描述: NPN硅外延雙晶體管
文件頁(yè)數(shù): 1/12頁(yè)
文件大?。?/td> 68K
代理商: UPA836TC-T1
Silicon Transistor
μ
PA836TF
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
PRELIMINARY DATA SHEET
Document No. P12728EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
1997
DESCRIPTION
The
μ
PA836TF has two different built-in transistors (Q1
and Q2) for low noise amplification in the VHF band to UHF
band.
PACKAGE DRAWINGS (Unit:mm)
FEATURES
Low noise
Q1 : NF = 1.5 dB TYP. @f = 2 GHz, V
CE
= 3 V, I
C
= 3 mA
Q2 : NF = 1.7 dB TYP. @f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
High gain
Q1 :
|
S
21e
|
Q2 :
|
S
21e
|
6-pin thin-type small mini mold package
2 different transistors on-chip (2SC5193, 2SC4959)
2
= 8.5 dB TYP. @f = 2 GHz, V
CE
= 3 V, I
C
= 10 mA
2
= 3.5 dB TYP. @f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
ON-CHIP TRANSISTORS
Q1
Q2
3-pin small mini mold part No.
2SC4959
2SC5193
The
μ
PA833TF features the Q1 and Q2 in inverted positions.
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
μ
PA836TF
Loose products
(50 pcs)
μ
PA836TF-T1
Taping products
(3 kpcs/reel)
Caution is required concerning excess input, such as fromc electricitybecause the high-frequency
process is used for this device.
8-mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2
Emitter), and pin 4 (Q2 Base)
face perforated side of tape.
V
2
1
0
0
0
0
3
2
1
4
5
6
0
2.10±0.1
1.25±0.1
0
0
+
0
B1
Q1
Q2
6
5
4
3
2
1
E2
B2
C1
E1
C2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
PIN CONFIGURATION (Top View)
The information in this document is subject to change without notice.
相關(guān)PDF資料
PDF描述
UPA836TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
UPA836TF-T1 NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
UPA838TF-T1 NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA838TF NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA862TD-T3 NECs NPN SILICON RF TWIN TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA836TD 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP
UPA836TD-T3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP
UPA836TF 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
UPA836TF-T1 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
UPA837TF 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR