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參數(shù)資料
| 型號(hào)： | UPA838TF |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| 中文描述： | NPN硅外延雙晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 18K |
| 代理商： | UPA838TF |
UPA838TF
NPN SILICON EPITAXIAL
TWIN TRANSISTOR
PRELIMINARY DATA SHEET
California Eastern Laboratories
SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2.0 mm x 1.25 mm
LOW HEIGHT PROFILE:
Just 0.60 mm high
TWO DIFFERENT DIE TYPES:
Q1 - Ideal oscillator transistor
Q2 - Ideal buffer amplifier transistor
FEATURES
DESCRIPTION
The UPA838TF contains one NE688 and one NE687 NPN high
frequency silicon bipolar chip. NEC's new low profile TF
package is ideal for all portable wireless applications where
reducing component height is a prime consideration. Each
transistor chip is independently mounted and easily configured
for oscillator/buffer amplifier and other applications.
Notes: 1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitances meter.
PART NUMBER
PACKAGE OUTLINE
UPA838TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
I
EBO
h
FE
f
T
f
T
Cre
|S
21E
|
2
|S
21E
|
2
NF
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 1 V, I
C
= 3 mA
Gain Bandwidth (1) at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Gain Bandwidth (2) at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 1 V, I
E
= 0, f = 1 MHz
Insertion Power Gain (1) at V
CE
= 1 V, I
C
=3 mA, f = 2 GHz
Insertion Power Gain (2) at V
CE
= 3 V, I
C
=20 mA, f = 2 GHz
Noise Figure (1) at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
μ
A
μ
A
0.1
0.1
145
100
4.0
GHz
GHz
pF
dB
dB
dB
4.5
9.0
0.75
3.5
6.5
1.7
0.85
2.5
2.5
NF
Noise Figure (2) at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
dB
1.5
I
CBO
I
EBO
h
FE
f
T
f
T
Cre
|S
21E
|
2
|S
21E
|
2
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 2 V, I
C
= 20 mA
Gain Bandwidth (1) at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Gain Bandwidth (2) at V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 2 V, I
E
= 0, f = 1 MHz
Insertion Power Gain (1) at V
CE
= 2 V, I
C
=20 mA, f = 2 GHz
Insertion Power Gain (2) at V
CE
= 1 V, I
C
=10 mA, f = 2 GHz
μ
A
μ
A
0.1
0.1
140
70
9
7
GHz
GHz
pF
dB
dB
11
9
0.4
8.5
7.5
0.8
7
6
NF
Noise Figure (1) at V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
dB
1.3
2
NF
Noise Figure (2) at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
dB
1.3
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Q
Q
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TS06
2.1
±
0.1
1.25
±
0.1
0 ~ 0.1
0.13
±
0.05
0.6
±
0.1
2.0
±
0.2
0.65
1.3
1
2
3
4
5
6
0.22
(All Leads)
+0.10
0.45
Q1
Q2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Note: Pin 1 is the
lower left most pin as
the package lettering
is oriented and read
left to right.
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