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參數(shù)資料
| 型號： | UPA828TF-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
| 中文描述： | 高速低噪聲放大器NPN硅外延雙晶體管，內(nèi)建6頻率引腳2 × 2SC5184薄型小微型模具 |
| 文件頁數(shù)： | 2/20頁 |
| 文件大?。?/td> | 92K |
| 代理商： | UPA828TF-T1 |
P
PA828TF
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
P
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
P
A
DC Current Gain
h
FE
V
CE
= 2 V, I
C
= 20 mA
Note 1
70
140
Gain Bandwidth Product (1)
f
T
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
9
11
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
7
9
GHz
Feedback Capacitance
C
re
V
CB
= 2 V, I
E
= 0, f = 1 MHz
Note 2
0.4
0.8
pF
Insertion Power Gain (1)
|S
21e
|
2
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
7
8.5
dB
Insertion Power Gain (2)
|S
21e
|
2
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
6
7.5
dB
Noise Figure (1)
NF
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
1.3
2
dB
Noise Figure (2)
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
1.3
2
dB
h
FE
Ratio
h
FE1
/h
FE2
V
CE
= 2 V, I
C
= 20 mA
h
FE
1 = smaller h
FE
value among Q1 and Q2
h
FE
2 = larger h
FE
value among Q1 and Q2
0.85
Notes 1.
Pulse measurement P
W
d
350
P
s, Duty cycle
d
2%
2.
Capacitance between collector and base measured with a capacitance meter (auto-balancing bridge
method). Emitter should be connected to the guard pin of capacitance meter.
h
FE
CLASSIFICATION
Rank
KB
Marking
R86
h
FE
value
70 to 140
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA829TD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP |
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