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參數(shù)資料
| 型號： | UPA828TF-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
| 中文描述： | 高速低噪聲放大器NPN硅外延雙晶體管，內(nèi)建6頻率引腳2 × 2SC5184薄型小微型模具 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大小： | 92K |
| 代理商： | UPA828TF-T1 |
The information in this document is subject to change without notice.
SILICON TRANSISTOR
P
PA828TF
HIGH-FREQUENCY LOW-NOISE AMPLIFIER
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 6-PIN 2
u
2SC5184) THIN-TYPE SMALL MINI MOLD
1997
Document No. P12693EJ1V0DS00 (1st edition)
Date Published July 1997 N
Printed in Japan
PRELIMINARY DATA SHEET
PIN CONFIGURATION (Top View)
FEATURES
Low noise
NF = 1.3 dB TYP. @ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
6-pin thin-type small mini mold package adopted
Built-in 2 transistors (2
u
2SC5184)
ORDERING INFORMATION
Part Number
Quantity
Packing Style
P
PA828TF
Loose products
(50 pcs)
P
PA828TF-T1
Taping products
(3 kpcs/reel)
Remark
If you require an evaluation sample, please contact
an NEC Sales Representative (Unit sample quantity
is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
q
C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CBO
5
V
Collector to Emitter Voltage
V
CEO
3
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
90 in 1 element
180 in 2 elements
mW
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
e
65 to +150
°C
Caution is required concerning excess input, such as from static electricity, due to the high-precision
fabrication processes used for this device.
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2
Emitter), Pin 4 (Q2 Base) face to
perforation side of the tape.
PACKAGE DRAWINGS (Unit: mm)
B1
Q1
Q2
6
5
4
3
2
1
E2
B2
C1
E1
C2
PIN CONNECTIONS
1. Collector(Q1)
2. Emitter
3. Collector (Q2)
(Q1)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
R
2
1
0
0
0
0
3
2
1
4
5
6
0
2.10±0.1
1.25±0.1
0
0
+
–
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA829TD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP |
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| UPA829TF | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA831 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
| UPA831TC | 制造商:CEL 制造商全稱:CEL 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
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