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參數(shù)資料
| 型號(hào)： | UP2518 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | LOW VCE(SAT) PNP SILICON POWER TRANSISTORS |
| 中文描述： | 低Vce（sat）進(jìn)步黨硅功率晶體管 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 125K |
| 代理商： | UP2518 |
UP2518
PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R206-083,A
4 of 4
T HERMAL CHARACT ERIS T ICS AND DERAT ING INFORMAT ION
Derating Curve
1000
800
600
400
200
0
-60 -40 -20
0
20 40
60
80 100 120 140 160
M
Ambient Temperature (
f
1
f
P
D = f
1
/
f
P
D=1.0
D=0.2
D=0.5
D=0.1
D=0.5
Snl ue
200
150
100
0.1ms
0
1ms
10ms
0.1ms
1s
10s
200
50
T
/
Pulse Width
Maximum Transient Thermal Resistance
Devices were mounted on a
15mmx15mm ceramic substrate
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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| UP2518-AE3-6-R | LOW VCE(SAT) PNP SILICON POWER TRANSISTORS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UP2518_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VCE(SAT) PNP SILICON POWER TRANSISTORS |
| UP2518-AE3-6-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VCE(SAT) PNP SILICON POWER TRANSISTORS |
| UP2518G-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VCE(SAT) PNP SILICON POWER TRANSISTORS |
| UP2518L-AE3-6-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VCE(SAT) PNP SILICON POWER TRANSISTORS |
| UP2518L-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VCE(SAT) PNP SILICON POWER TRANSISTORS |
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