參數(shù)資料
型號(hào): UP2518
廠商: 友順科技股份有限公司
英文描述: LOW VCE(SAT) PNP SILICON POWER TRANSISTORS
中文描述: 低Vce(sat)進(jìn)步黨硅功率晶體管
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 125K
代理商: UP2518
UNISONIC TECHNOLOGIES CO, LTD
UP2518
PNP EPITAXIAL SILICON TRANSISTOR
www.unisonic.com.tw
Copyright 2005 Unisonic Technologies Co., LTD
1 of 4
QW-R206-083,A
LOW V
CE(S AT )
PNP S ILICON
POWER T RANS IS T ORS
FEAT URES
* Extremely
low collector-emitter saturation voltage
V
CE(SAT)
and
corresponding
extremely low equivalent on-resistance
R
CE(SAT)
(97m
at 1.5A)
*
High collector current capability(1
.5A)
* High peak pulse current up to 6A
*
High collector current gain
SOT-23
1
2
3
*Pb-free plating product number: UP2518L
PIN CONFIGURAT ION
PIN NO.
1
2
3
PIN NAME
EMITTER
BASE
COLLECTOR
ORDERING INFORMAT ION
Order Number
Normal
Lead Free Plating
UP2518L-AE3-6-R
Package
Packing
UP2518-AE3-6-R
SOT-23
Tape Reel
MARK ING INFORMAT ION
Y18
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