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參數(shù)資料
| 型號： | UP2518 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | LOW VCE(SAT) PNP SILICON POWER TRANSISTORS |
| 中文描述： | 低Vce（sat）進步黨硅功率晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 125K |
| 代理商： | UP2518 |
UP2518
PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R206-083,A
2 of 4
ABS OLUT E MAX IMUM RAT ING
(T
a
= 25
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
PEAK
I
C
I
B
P
D
T
J
T
STG
RATINGS
-20
-20
-5
-6
-1.5
-500
625
+150
-40~+150
UNIT
V
V
V
A
A
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current (Note 2)
Continuous Collector Current
Base Current
Power Dissipation at T
a
=25°C(Note 3)
Junction Temperature
Storage Temperature
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width=300ms. Duty cycle
2%
3. Assume the device is mounted and measured on a ceramic substrate15x15x0.6mm
ELECT RICAL CHARACT ERIS T ICS
(T
a
= 25
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
TEST CONDITIONS
I
C
= -100μA
I
C
= -10mA
I
E
= -100μA
V
CB
= -15V
V
EB
= -4V
V
CES
= -15V
I
C
= -100mA, I
B
= -10mA
I
C
= -1A, I
B
= -20mA
I
C
= -1.5A, I
B
= -50mA
V
BE(SAT)
I
C
= -1.5A, I
B
= -50mA
V
BE(ON)
I
C
= -2A, V
CE
= -2V
I
C
= -10mA, V
CE
= -2V
I
C
= -100mA, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
I
C
= -4A, V
CE
= -2V
I
C
= -6A, V
CE
= -2V
f
T
I
C
= -50mA, V
CE
=-10V, f=100MHz
C
OB
V
CB
= -10V, f=1MHz
t
(ON)
t
(OFF)
I
B1
= I
B2
= -20mA
MIN
-20
-20
-5
TYP
-65
-55
-8.8
-16
-130
-145
-0.87
-0.81
475
450
230
70
30
180
21
40
670
MAX
-100
-100
-100
-40
-200
-220
-1.0
-1.0
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
V
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
h
FE
300
300
150
35
15
150
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle
MHZ
pF
ns
ns
30
V
CC
= -10V, I
C
= -1A
2%
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