參數(shù)資料
型號(hào)： TWR-MCF51MM-KIT
廠商： Freescale Semiconductor
文件頁數(shù)： 43/57頁
文件大?。?/td> 0K
描述： KIT TOWER DEV FOR MCF51AG
設(shè)計(jì)資源： TWR-MCF51MM Schematic
標(biāo)準(zhǔn)包裝： 1
系列： ColdFire®, Flexis™
類型： MCU
適用于相關(guān)產(chǎn)品： Freescale 電源塔系統(tǒng)，MCF51MM
所含物品： 4 個(gè)板，線纜，文檔，DVD，MED-EKG 傳感器
Electrical Characteristics
Freescale Semiconductor
48
3.14 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory chapter in the Reference
Manual for this device (MCF51MM256RM).
Table 24. Flash Characteristics
#
Characteristic
Symbol
Min
Typical
Max
Unit
C
1
Supply voltage for program/erase
–40C to 105CVprog/erase
1.8
—
3.6
V
D
2
Supply voltage for read operation
VRead
1.8
—
3.6
V
D
3
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
D
4
Internal FCLK period (1/FCLK)
tFcyc
5
—
6.67
sD
5
Byte program time (random location)2
tprog
9tFcyc
P
6
Byte program time (burst mode)2
tBurst
4tFcyc
P
7
Page erase time2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for calculating
approximate time to program and erase.
tPage
4000
tFcyc
P
8
Mass erase time2
tMass
20,000
tFcyc
P
9
Program/erase endurance3
TL to TH = –40C to + 105C
T = 25C
3
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how Freescale defines
typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
10,000
—
100,000
—
cycles
C
10
Data retention4
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25
C using the
Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin EB618, Typical
Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
C
MCF51MM256/128, Rev. 5
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