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參數(shù)資料
| 型號(hào)： | TSM7104DCS |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 20V Dual P-Channel Enhancement Mode MOSFET |
| 中文描述： | 20V的雙P溝道增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | TSM7104DCS |
TSM7104D
1-3
2003/12 rev. A
TSM7104D
20V Dual P-Channel Enhancement Mode MOSFET
V
DS
= - 20V
R
DS (on)
, Vgs @ - 4.5V, Ids @ - 2.3A =130m
R
DS (on)
, Vgs @ - 2.5V, Ids @ - 2.0A =190m
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Surface mount
Ordering Information
Fast switching
Part No.
Packing
Package
TSM7104DCS
Tape & Reel
SOP-8
Block Diagram
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
- 20V
V
Gate-Source Voltage
V
GS
± 8
V
Continuous Drain Current, V
GS
@4.5V.
I
D
- 2.3
A
Pulsed Drain Current, V
GS
@4.5V
I
DM
- 10
A
Ta = 25
o
C
2
W
Maximum Power Dissipation
Ta > 25
o
C
P
D
16
mW/
o
C
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
o
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
R
θ
ja
62.5
o
C/W
Pin assignment:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
5, 6. Drain 2
7, 8. Drain 1
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