參數(shù)資料
型號(hào)： TSM7401CS
廠商： Taiwan Semiconductor Co., Ltd.
英文描述： 20V N-Channel MOSFET w/ESD Protected
中文描述： 20V的N溝道MOSFET瓦特/ ESD保護(hù)
文件頁(yè)數(shù)： 1/5頁(yè)
文件大小： 175K
代理商： TSM7401CS
TSM7401
1-1
2003/12 rev. A
TSM7401
20V N-Channel MOSFET w/ESD Protected
V
DS
= 20V
R
DS (on)
, Vgs @ 4.5V, Ids @ 4.5A =20m
R
DS (on)
, Vgs @ 2.7V, Ids @ 3.5A =25m
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Specially designed for Li-ion battery packs.
Battery switch application
Ordering Information
Part No.
Packing
Package
TSM7401CS
Tape & Reel
2,500/per reel
SOP-8
Block Diagram
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20V
V
Gate-Source Voltage
V
GS
± 12
V
Continuous Drain Current, V
GS
@4.5V.
I
D
8
A
Pulsed Drain Current, V
GS
@4.5V
I
DM
30
A
Ta = 25
o
C
2.5
Maximum Power Dissipation
Ta = 70
o
C
P
D
1.3
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
o
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Foot (Drain) Thermal Resistance
R
θ
jf
30
o
C/W
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
R
θ
ja
50
o
C/W
Pin assignment:
1. Source
2. Source
3. Source
4. Gate
5, 6, 7, 8. Drain
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