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參數(shù)資料
| 型號： | TSM7401CS |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 20V N-Channel MOSFET w/ESD Protected |
| 中文描述： | 20V的N溝道MOSFET瓦特/ ESD保護 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 175K |
| 代理商： | TSM7401CS |
TSM7401
2-2
2003/12 rev. A
Electrical Characteristics
(Ta = 25
o
C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
BV
DSS
20
--
--
V
Drain-Source On-State Resistance
V
GS
= 4.5V, I
D
= 4.5A
R
DS(ON)
--
20
25
Drain-Source On-State Resistance
V
GS
= 2.7V, I
D
= 3.5A
R
DS(ON)
--
25
30
m
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
V
GS(TH)
0.65
0.85
--
V
Zero Gate Voltage Drain Current
V
DS
= 20V, V
GS
= 0V
I
DSS
--
--
1.0
uA
Gate Body Leakage
V
GS
= ± 4.5V, V
DS
= 0V
I
GSS
--
--
± 100
nA
On-State Drain Current
V
GS
= 4.5V, V
DS
>= 5V
I
D(ON)
30
--
--
A
Forward Transconductance
Dynamic
V
DS
= 10V, I
D
= 4.5A
g
fs
--
30
--
S
Total Gate Charge
Q
g
--
15.5
35
Gate-Source Charge
Q
gs
--
3
--
Gate-Drain Charge
V
DS
= 10V, I
D
= 4.5A,
V
GS
= 4.5V
Q
gd
--
5
--
nC
Turn-On Delay Time
t
d(on)
--
75
100
Turn-On Rise Time
t
r
--
125
150
Turn-Off Delay Time
t
d(off)
--
600
720
Turn-Off Fall Time
V
DD
= 10V, R
L
= 10
,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6
t
f
--
300
360
nS
Input Capacitance
C
iss
--
1336
--
Output Capacitance
C
oss
--
220
--
Reverse Transfer Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
130
--
pF
Source-Drain Diode
Max. Diode Forward Current
I
S
--
--
2.0
A
Diode Forward Voltage
Note : pulse test: pulse width <=300uS, duty cycle <=2%
I
S
= 2.0A, V
GS
= 0V
V
SD
--
0.6
1.2
V
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