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參數(shù)資料
| 型號(hào)： | TSM8405P |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | Single P-Channel 1.8V Specified MicroSURF MOSFET |
| 中文描述： | 單P溝道MOSFET的1.8指定MicroSURF |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 183K |
| 代理商： | TSM8405P |
TSM8405P
1-1
2003/10 rev. G
TSM8405P
Single P-Channel 1.8V Specified MicroSURF
TM
MOSFET
V
DS
= - 12V
R
DS (on)
, Vgs @ - 4.5V, Ids @ - 4.9A = 50m
R
DS (on)
, Vgs @ - 2.5V, Ids @ - 4.4A = 70m
R
DS (on)
, Vgs @ - 1.8V, Ids @ - 4.0A = 90m
Description
TSM8405P is new low cost, state of the art MicroSURF
TM
lateral MOSFET process technology in chip scale bondwireless
packaging minimizes PCB space and Rds(on) plus provides an ultra low Qg x Rds(on) figure of merit.
Features
Low profile package: less than 0.8mm height when
mounted on PCB
Occupies only 2.25mm
2
of PCB area
Block Diagram
Less than 25% of the area of a SSOT-6
Excellent thermal and electrical capabilities
Lead free solder bumps available
Ordering Information
Part No.
Packing
Tape & Reel
Q’ty
TSM8405P
3kpcs / 7”
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
- 12V
V
Gate-Source Voltage
V
GS
± 8
V
Continuous Drain Current
I
D
- 4.9
A
Pulsed Drain Current
I
DM
- 10
A
Maximum Power Dissipation (Steady State)
P
D
1. 5
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
o
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Ambient Thermal Resistance
R
θ
ja
85
o
C/W
Junction to Balls Thermal Resistance
R
θ
jR
12
o
C/W
Lateral Power for
Load Switching and PA Switch
Bump Side View
Patent Pending
S
S
G
D
D
D
G
S
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