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參數(shù)資料
| 型號： | TSM7311DCS |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 20V Dual N-Channel MOSFET w/ESD Protected |
| 中文描述： | 20V的雙N溝道MOSFET瓦特/ ESD保護 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 176K |
| 代理商： | TSM7311DCS |
TSM7311D
1-1
2003/12 rev. A
TSM7311D
20V Dual N-Channel MOSFET w/ESD Protected
V
DS
= 20V
R
DS (on)
, Vgs @ 4.5V, Ids @ 6.5A =22m
R
DS (on)
, Vgs @ 2.5V, Ids @ 5.5A =30m
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Specially designed for Li-ion battery packs.
Battery switch application
Ordering Information
Part No.
Packing
Package
TSM7311DCS
Tape & Reel
2,500/per reel
SOP-8
Block Diagram
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20V
V
Gate-Source Voltage
V
GS
± 12
V
Continuous Drain Current, V
GS
@4.5V.
I
D
6.5
A
Pulsed Drain Current, V
GS
@4.5V
I
DM
30
A
Ta = 25
o
C
2.0
Maximum Power Dissipation
Ta = 70
o
C
P
D
1.3
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
o
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Foot (Drain) Thermal Resistance
R
θ
jf
35
o
C/W
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
R
θ
ja
62.5
o
C/W
Pin assignment:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
5, 6. Drain 2
7, 8. Drain 1
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| TSM7401 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20V N-Channel MOSFET w/ESD Protected |
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