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參數(shù)資料
| 型號： | TSM5NS50CPRO |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 500V N-Channel Power MOSFET |
| 中文描述： | 500V N溝道功率MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 318K |
| 代理商： | TSM5NS50CPRO |
TSM5NS50
500V N-Channel Power MOSFET
Electrical Specifications
2/6
Version: A07
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
a
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= ±20V, V
DS
= 0V
V
DS
= 500V, V
GS
= 0V
V
GS
= 10V, I
D
= 4.0A
I
S
= 4.4A, V
GS
= 0V
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(ON)
V
SD
500
2
--
--
--
--
--
--
--
--
0.7
1.0
--
4
V
V
nA
μ
A
Ω
V
±100
1.0
0.8
1.5
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
--
--
--
--
--
--
13
3
6
400
120
40
--
--
--
--
--
--
V
DS
= 520V, I
D
= 4.4A,
V
GS
= 10V
nC
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-to-Drain Reverse Recovery
Time
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
6
3
50
10
--
--
--
--
V
GS
= 10V, I
D
= 4.4A,
V
DS
= 350V, R
G
= 25
Ω
nS
I
S
= 4.4A,
di/dt = 100A/uS
t
r
--
250
00
nS
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