參數(shù)資料
型號(hào): TSM6968D
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: 20V Dual N-Channel MOSFET w/ESD Protected
中文描述: 20V的雙N溝道MOSFET瓦特/ ESD保護(hù)
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 175K
代理商: TSM6968D
TSM6968D
1-5
2003/12 rev. A
TSM6968D
20V Dual N-Channel MOSFET w/ESD Protected
V
DS
= 20V
R
DS (on)
, Vgs @ 4.5V, Ids @ 6.5A =22m
R
DS (on)
, Vgs @ 2.5V, Ids @ 5.5A =29m
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Specially designed for Li-ion battery packs.
Ordering Information
Battery switch application
Part No.
Packing
Package
TSM6968DCA
Tape & Reel
3,000/per reel
TSSOP-8
Block Diagram
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20V
V
Gate-Source Voltage
V
GS
± 12
V
Continuous Drain Current, V
GS
@4.5V.
I
D
6.5
A
Pulsed Drain Current, V
GS
@4.5V
I
DM
30
A
Ta = 25
o
C
1.5
Maximum Power Dissipation
Ta = 70
o
C
P
D
0.96
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
o
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Foot (Drain) Thermal Resistance
R
θ
jf
35
o
C/W
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
R
θ
ja
83
o
C/W
Pin assignment:
1. Drain
2. Source 1
3. Source 1
4. Gate 1
5, Gate 2
6. Source 2
7, Source 2
8. Drain
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