參數(shù)資料
型號： TSM5NS50CPRO
廠商： Taiwan Semiconductor Co., Ltd.
英文描述： 500V N-Channel Power MOSFET
中文描述： 500V N溝道功率MOSFET
文件頁數(shù)： 1/6頁
文件大?。?/td> 318K
代理商： TSM5NS50CPRO
TSM5NS50
500V N-Channel Power MOSFET
1/6
Version: A07
TO-252
Features
●
●
●
Low R
DS(on)
Low Gate Charge
Unclamped Inductive Switching (UIS) Rated
Application
●
●
●
Load Switch
Ballast
Lighting
Ordering Information
Part No.
Package
Packing
TSM5NS50CP RO
TO-252
T&R
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
500
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
I
D
4.4
A
Pulsed Drain Current
I
DM
20
A
Repetitive Avalanche Current
I
AR
5
A
Energy Avalanche
EAS
150
mJ
Maximum Power Dissipation
Ta = 25
o
C
P
D
70
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
-55 to +150
o
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance - Junction to Case
R
JC
1.78
o
C/W
Thermal Resistance - Junction to Ambient
Notes:
a. When mounted on 1 inch square 2oz copper clad FR-4
R
JA
62
o
C/W
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
500
0.8 @ V
GS
= 10V
4
Block Diagram
N-Channel MOSFET
Pin Definition:
1. Gate
2. Drain
3. Source
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